NSTB1002DXV5T1

new-10%

Manufacturer part number:NSTB1002DXV5T1

Manufacturer:ON Semiconductor

Description:TRANS NPN PREBIAS/PNP 0.5W SOT55

Case Package:SOT-23

Datasheet:NSTB1002DXV5T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-553
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	500mW
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	2
Configuration	CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application	SWITCHING
Polarity/Channel Type	NPN AND PNP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V / 100 @ 1mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	40V
Voltage - Collector Emitter Breakdown (Max)	50V 40V
Current - Collector (Ic) (Max)	100mA 200mA
Transition Frequency	250MHz
Frequency - Transition	250MHz
Resistor - Base (R1)	47k Ω
Resistor - Emitter Base (R2)	47k Ω
Turn Off Time-Max (toff)	300ns
Turn On Time-Max (ton)	70ns
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead