NSVDTC113EM3T5G

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NSVDTC113EM3T5G

Manufacturer part number:NSVDTC113EM3T5G

Manufacturer:ON Semiconductor

Description:NSVDTC113EM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVDTC113EM3T5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	260mW
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	260mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	3 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	1 k Ω
Resistor - Emitter Base (R2)	1 k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free