NSVDTC114YM3T5G

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NSVDTC114YM3T5G

Manufacturer part number:NSVDTC114YM3T5G

Manufacturer:ON Semiconductor

Description:NSVDTC114YM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVDTC114YM3T5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 4.7
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	260mW
Terminal Position	DUAL
Terminal Form	FLAT
Reference Standard	AEC-Q101
Number of Elements	1
Element Configuration	Single
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	10 k Ω
Resistor - Emitter Base (R2)	47 k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free