NSVDTC123JET1G

new-10%

Manufacturer part number:NSVDTC123JET1G

Manufacturer:ON Semiconductor

Description:TRANS NPN 50V 0.1A SC75

Case Package:SOT-23

Datasheet:NSVDTC123JET1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 21
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	200mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	2.2 k Ω
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free