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NSVDTC143ZET1G

NSVDTC143ZET1G

NSVDTC143ZET1G

ON Semiconductor

NSVDTC143ZET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

NSVDTC143ZET1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Element Configuration Single
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06834 $0.20502
6,000 $0.05943 $0.35658
15,000 $0.05052 $0.7578
30,000 $0.04754 $1.4262
75,000 $0.04457 $3.34275
150,000 $0.03962 $5.943
NSVDTC143ZET1G Product Details

NSVDTC143ZET1G Description


The ON Semiconductor NSVDTC143ZET1G is an NPN Bipolar Digital Transistor (BRT) containing a single transistor with a monolithic bias network consisting of two resistors.



NSVDTC143ZET1G Features


  • Simplifies Circuit Design

  • Reduces Board Space

  • Reduces Component Count

  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable



NSVDTC143ZET1G Applications


  • Power Management

  • Industrial

  • Automotive


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