NSVDTC143ZET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
NSVDTC143ZET1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Element Configuration
Single
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Resistor - Base (R1)
4.7 k Ω
Resistor - Emitter Base (R2)
47 k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06834
$0.20502
6,000
$0.05943
$0.35658
15,000
$0.05052
$0.7578
30,000
$0.04754
$1.4262
75,000
$0.04457
$3.34275
150,000
$0.03962
$5.943
NSVDTC143ZET1G Product Details
NSVDTC143ZET1G Description
The ON Semiconductor NSVDTC143ZET1G is an NPN Bipolar Digital Transistor (BRT) containing a single transistor with a monolithic bias network consisting of two resistors.
NSVDTC143ZET1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable