NSVIMD10AMT1G

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NSVIMD10AMT1G

Manufacturer part number:NSVIMD10AMT1G

Manufacturer:ON Semiconductor

Description:NSVIMD10AMT1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVIMD10AMT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Tin (Sn)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power - Max	285mW
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 5V / 68 @ 100mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Resistor - Base (R1)	13k Ω, 130 Ω
Resistor - Emitter Base (R2)	10k Ω
RoHS Status	ROHS3 Compliant