NSVMMBD352WT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NSVMMBD352WT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.60
Subcategory
Microwave Mixer Diodes
Pin Count
3
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
10μA @ 7V
Voltage - Forward (Vf) (Max) @ If
600mV @ 10mA
Max Reverse Leakage Current
10μA
Operating Temperature - Junction
-55°C~150°C
Halogen Free
Halogen Free
Current - Average Rectified (Io)
10mA DC
Max Reverse Voltage (DC)
7V
Average Rectified Current
10mA
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
7V
Diode Configuration
1 Pair Series Connection
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NSVMMBD352WT1G Product Details
NSVMMBD352WT1G Overview
The reverse voltage peak of this device is 10μA.When reverse biased, its maximal reverse leakage current is 10μA, which corresponds to its maximum reverse leakage current.
NSVMMBD352WT1G Features
a peak voltage of 10μA a reverse voltage peak of 10μA
NSVMMBD352WT1G Applications
There are a lot of ON Semiconductor NSVMMBD352WT1G applications of rectifier diode array.