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NSVMMBTH10LT1G

  • NSVMMBTH10LT1G
  • NSVMMBTH10LT1G

NSVMMBTH10LT1G

NSVMMBTH10LT1G

ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

SOT-23

NSVMMBTH10LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 225mW
Base Part Number MMBTH10
Pin Count 3
Element Configuration Single
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Collector Emitter Breakdown Voltage 25V
Max Frequency 100MHz
Transition Frequency 650MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 25V
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.222623 $0.222623
10 $0.210022 $2.10022
100 $0.198134 $19.8134
500 $0.186918 $93.459
1000 $0.176339 $176.339
NSVMMBTH10LT1G Product Details
Description:

The NSVMMBTH10LT1G is a NPN Bipolar Transistor from ON Semiconductor. It is designed for use in RF applications such as VHF mixers. It is housed in a SOT-23 package and has a maximum collector-emitter voltage of 25V.

Features:

• NPN Bipolar Transistor
• Designed for RF applications
• Maximum collector-emitter voltage of 25V
• Housed in a SOT-23 package
• Low noise and high gain

Applications:

• VHF mixers
• RF amplifiers
• RF switches
• RF detectors
• RF oscillators

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