NSVMMUN2113LT3G

new-10%

Manufacturer part number:NSVMMUN2113LT3G

Manufacturer:ON Semiconductor

Description:TRANS PREBIAS PNP SOT23-3

Case Package:SOT-23

Datasheet:NSVMMUN2113LT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	246mW
Terminal Position	DUAL
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	246mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
JEDEC-95 Code	TO-236AB
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	47 k Ω
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free