The ON Semiconductor NSVMMUN2212LT1G is a single, pre-biased bipolar junction transistor (BJT) in a 3-pin SOT-23 package. It is a NPN transistor with a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. This device is designed for use in digital applications, such as logic level switching, signal amplification, and current limiting. It is also suitable for use in low-power analog applications, such as audio amplifiers and signal conditioning. The pre-biased design of the NSVMMUN2212LT1G allows for easy implementation in applications where a bias voltage is not available. This device is RoHS compliant and halogen-free.