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NSVMMUN2236LT1G

NSVMMUN2236LT1G

NSVMMUN2236LT1G

ON Semiconductor

NSVMMUN2236LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

NSVMMUN2236LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 246mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 100 k Ω
Resistor - Emitter Base (R2) 100 k Ω
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6,000 $0.06006 $0.36036

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