NSVMUN5235DW1T1G

join

new-10%

Manufacturer part number:NSVMUN5235DW1T1G

Manufacturer:ON Semiconductor

Description:TRANS PREBIAS 2NPN 50V SC88

Case Package:SOT-23

Datasheet:NSVMUN5235DW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	385mW
Transistor Type	2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Resistor - Base (R1)	2.2k Ω
Resistor - Emitter Base (R2)	47k Ω
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.10112	$0.30336

The ON Semiconductor NSVMUN5235DW1T1G is a pre-biased, two-NPN transistor array in a SC-88 package. It is designed for use in a wide range of applications, including power management, audio amplifiers, and motor control. The device features a maximum collector-emitter voltage of 50V, a maximum collector current of 0.5A, and a maximum power dissipation of 500mW. It also has a low saturation voltage of 0.2V and a high gain of 200. The device is RoHS compliant and is suitable for use in a variety of industrial and consumer applications.