NSVMUN5236T1G

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Manufacturer part number:NSVMUN5236T1G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - Pre-Biased SS SC70 BR XSTR NPN 50V

Case Package:SOT-23

Datasheet:NSVMUN5236T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	202mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Reference Standard	AEC-Q101
Number of Elements	1
Polarity	NPN
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	202mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	80
Resistor - Base (R1)	100 k Ω
Resistor - Emitter Base (R2)	100 k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free