NSVT65010MW6T1G

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Manufacturer part number:NSVT65010MW6T1G

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR - NSVT65010MW6T1G - Bipolar Transistor Array, Dual PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363

Case Package:SOT-23

Datasheet:NSVT65010MW6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	380mW
Polarity	PNP
Power - Max	380mW
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	650mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	65V
Max Breakdown Voltage	65V
Frequency - Transition	100MHz
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free