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NSVT65011MW6T1G

NSVT65011MW6T1G

NSVT65011MW6T1G

ON Semiconductor

ON SEMICONDUCTOR - NSVT65011MW6T1G - Bipolar Transistor Array, Dual NPN, 65 V, 380 mW, 100 mA, 300 hFE, SOT-363

SOT-23

NSVT65011MW6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 380mW
Polarity NPN
Power - Max 380mW
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Max Breakdown Voltage 65V
Frequency - Transition 100MHz
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.389589 $0.389589
10 $0.367536 $3.67536
100 $0.346733 $34.6733
500 $0.327107 $163.5535
1000 $0.308591 $308.591

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