NTB5605T4G

new-10%

Manufacturer part number:NTB5605T4G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 60V 18.5A D2PAK

Case Package:SOT-23

Datasheet:NTB5605T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	88W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	88W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18.5A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Rise Time	122ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	18.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	55A
RoHS Status	RoHS Compliant