NTD18N06L-1G

new-10%

Manufacturer part number:NTD18N06L-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 18A IPAK

Case Package:SOT-23

Datasheet:NTD18N06L-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.1W Ta 55W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	55W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 9A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	675pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Rise Time	79ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	72 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free