NTD3808N-1G

new-10%

Manufacturer part number:NTD3808N-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 16V 12A IPAK

Case Package:SOT-23

Datasheet:NTD3808N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-F3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta 52W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1660pF @ 12V
Current - Continuous Drain (Id) @ 25°C	12A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Drain to Source Voltage (Vdss)	16V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Continuous Drain Current (ID)	76A
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	152A
DS Breakdown Voltage-Min	16V
RoHS Status	RoHS Compliant
Lead Free	Lead Free