NTD4963N-35G

new-10%

Manufacturer part number:NTD4963N-35G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 8.1A IPAK

Case Package:SOT-23

Datasheet:NTD4963N-35G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	9.6MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	1.1W Ta 35.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35.7W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1035pF @ 12V
Current - Continuous Drain (Id) @ 25°C	8.1A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	16.2nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	1.45V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Height	6.35mm
Length	6.73mm
Width	2.38mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free