Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	1.39W Ta 38.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38.5W
Case Connection	DRAIN
Turn On Delay Time	12.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs	17.2nC @ 4.5V
Rise Time	34.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14.2 ns
Turn-Off Delay Time	18.9 ns
Continuous Drain Current (ID)	17.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	68A
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	248A
Avalanche Energy Rating (Eas)	60 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NTD4965N-35G

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