NTJS3157NT2

new-10%

Manufacturer part number:NTJS3157NT2

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 3.2A SOT-363

Case Package:SOT-23

Datasheet:NTJS3157NT2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	235
Reach Compliance Code	not_compliant
Current Rating	3.2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	400mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	20V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead