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NTJS3157NT2

NTJS3157NT2

NTJS3157NT2

ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

SOT-23

NTJS3157NT2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 3.2A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 400mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 20V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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