NTMFS4826NET1G

new-10%

Manufacturer part number:NTMFS4826NET1G

Manufacturer:ON Semiconductor

Description:MOSFET NFETFL 30V 66A 5.9mOHM

Case Package:SOT-23

Datasheet:NTMFS4826NET1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected]k Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	870mW Ta 41.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.16W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1850pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9.5A Ta 66A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	39.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	5.2 ns
Continuous Drain Current (ID)	66A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.5A
Drain-source On Resistance-Max	0.0087Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	RoHS Compliant