NTMFS4836NT1G

new-10%

Manufacturer part number:NTMFS4836NT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 11A SO-8FL

Case Package:SOT-23

Datasheet:NTMFS4836NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 13 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
JESD-30 Code	R-PDSO-F6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	890mW Ta 55.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2677pF @ 12V
Current - Continuous Drain (Id) @ 25°C	11A Ta 90A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	242 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free