NTMKB4895NT1G

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Manufacturer part number:NTMKB4895NT1G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 30V 82A 4-Pin ICEPAK C-PAD T/R

Case Package:SOT-23

Datasheet:NTMKB4895NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-ICEPAK
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	R-XBCC-N2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1644pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta 66A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	66A
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.006Ohm
Pulsed Drain Current-Max (IDM)	120A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	80 mJ
RoHS Status	RoHS Compliant