NTMSD3P303R2G

new-10%

Manufacturer part number:NTMSD3P303R2G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 30V 2.34A 8-SOIC

Case Package:SOT-23

Datasheet:NTMSD3P303R2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	FETKY™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	-3.05A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	730mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 24V
Current - Continuous Drain (Id) @ 25°C	2.34A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	2.34A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
FET Feature	Schottky Diode (Isolated)
Feedback Cap-Max (Crss)	135 pF
RoHS Status	RoHS Compliant
Lead Free	Lead Free