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NTR4503NT1G

NTR4503NT1G

NTR4503NT1G

ON Semiconductor

NTR4503NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTR4503NT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 85MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2.5A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 420mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730mW
Turn On Delay Time 5.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 24V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 6.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 13.6 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 1.75V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.75 V
Feedback Cap-Max (Crss) 25 pF
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.51000 $0.51
500 $0.5049 $252.45
1000 $0.4998 $499.8
1500 $0.4947 $742.05
2000 $0.4896 $979.2
2500 $0.4845 $1211.25
NTR4503NT1G Product Details

NTR4503NT1G Description


NTR4503NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. Moreover, it is well suited for a low-voltage gate drive based on rated 4.5 V. Its SOT-23 package is used to save board space. 



NTR4503NT1G Features


  • Low RDS (on)

  • High efficiency

  • Low-voltage gate drive

  • Leading planar technology

  • Available in the SOT-23 surface-mount package



NTR4503NT1G Applications


  • DC?DC conversion

  • Load/power switch for portables

  • Load/power switch for computing


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