NTR4503NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTR4503NT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
85MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
2.5A
Pin Count
3
Number of Elements
1
Power Dissipation-Max
420mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
730mW
Turn On Delay Time
5.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
110m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 24V
Current - Continuous Drain (Id) @ 25°C
1.5A Ta
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Rise Time
6.7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.7 ns
Turn-Off Delay Time
13.6 ns
Continuous Drain Current (ID)
2.5A
Threshold Voltage
1.75V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.75 V
Feedback Cap-Max (Crss)
25 pF
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.51000
$0.51
500
$0.5049
$252.45
1000
$0.4998
$499.8
1500
$0.4947
$742.05
2000
$0.4896
$979.2
2500
$0.4845
$1211.25
NTR4503NT1G Product Details
NTR4503NT1G Description
NTR4503NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. Moreover, it is well suited for a low-voltage gate drive based on rated 4.5 V. Its SOT-23 package is used to save board space.