NUS5530MNR2G

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Manufacturer part number:NUS5530MNR2G

Manufacturer:ON Semiconductor

Description:NUS5530MNR2G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NUS5530MNR2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Surface Mount	YES
Number of Pins	8
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Applications	General Purpose
Voltage - Rated	35V PNP 20V P-Channel
Subcategory	Other Transistors
Current Rating (Amps)	2A PNP 3.9A P-Channel
Max Power Dissipation	2.5W
Peak Reflow Temperature (Cel)	260
Current Rating	3.9A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NUS5530MN
Pin Count	8
Number of Elements	1
Rise Time-Max	55ns
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	635mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	NPN, P-Channel
Collector Emitter Voltage (VCEO)	35V
Max Collector Current	2A
Continuous Drain Current (ID)	-3.9A
Gate to Source Voltage (Vgs)	-35V
Max Frequency	100MHz
Pulsed Drain Current-Max (IDM)	20A
Collector Emitter Saturation Voltage	-100mV
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Collector Base Voltage (VCBO)	-55V
Emitter Base Voltage (VEBO)	-5V
DC Current Gain-Min (hFE)	100
Drain to Source Resistance	200Ohm
VCEsat-Max	0.3 V
Fall Time-Max (tf)	70ns
Height	950μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free