NVD5117PLT4G

new-10%

Manufacturer part number:NVD5117PLT4G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 16m Ω @ 29A, 10V ±20V 4.8nF @ 25V 85nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:NVD5117PLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LIFETIME (Last Updated: 6 days ago)
Factory Lead Time	19 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	4.1W Ta 118W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.1W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	16m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4.8nF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 61A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Rise Time	195ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	132 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.022Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	240 mJ
Number of Segments	80
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free