NVD5862NT4G

new-10%

Manufacturer part number:NVD5862NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 90A DPAK-4

Case Package:SOT-23

Datasheet:NVD5862NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	LIFETIME (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	4.1W Ta 115W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.1W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7m Ω @ 48A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	98A
Drain-source On Resistance-Max	0.0057Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	205 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free