NVD6820NLT4G

new-10%

Manufacturer part number:NVD6820NLT4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 90V 10A Automotive 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:NVD6820NLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	LIFETIME (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	4W Ta 100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4209pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 4.5V
Rise Time	98ns
Drain to Source Voltage (Vdss)	90V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	59 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0205Ohm
DS Breakdown Voltage-Min	90V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free