NVF2955PT1G

new-10%

Manufacturer part number:NVF2955PT1G

Manufacturer:ON Semiconductor

Description:MOSFET P CH 60V 1.7A SOT223

Case Package:SOT-23

Datasheet:NVF2955PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	185m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	492pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	14.3nC @ 10V
Rise Time	7.6ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Avalanche Energy Rating (Eas)	225 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant