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NVMFS5C450NWFAFT3G

NVMFS5C450NWFAFT3G

NVMFS5C450NWFAFT3G

ON Semiconductor

NVMFS5C450NWFAFT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVMFS5C450NWFAFT3G Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 68W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 65μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Ta 102A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
NVMFS5C450NWFAFT3G Product Details

NVMFS5C450NWFAFT3G Description


NVMFS5C450NWFAFT3G is a 40v Single N-Channel Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET NVMFS5C450NWFAFT3G is in the SO-8FL package with 68W power dissipation.



NVMFS5C450NWFAFT3G Features


  • Small Footprint (5x6 mm) for Compact Design

  • Low RDS(on) to Minimize Conduction Losses

  • Low QG and Capacitance to Minimize Driver Losses

  • Wettable Flank Option for Enhanced Optical Inspection

  • AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and are RoHS Compliant



NVMFS5C450NWFAFT3G Applications


  • Consumer electronics

  • Radio-frequency (RF) applications

  • Transportation technology

  • Automotive industry


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