NVMFS5C673NLWFAFT1G

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Manufacturer part number:NVMFS5C673NLWFAFT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.2m Ω @ 25A, 10V ±20V 880pF @ 25V 9.5nC @ 10V 8-PowerTDFN, 5 Leads

Case Package:SOT-23

Datasheet:NVMFS5C673NLWFAFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Reach Compliance Code	not_compliant
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	46W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	9.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	290A
Avalanche Energy Rating (Eas)	88 mJ
Max Junction Temperature (Tj)	175°C
Height	1.1mm
RoHS Status	ROHS3 Compliant