PN3569 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PN3569 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
40V
Current Rating
150mA
Base Part Number
PN3569
Polarity
NPN
Power Dissipation
625mW
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
500mA
Lead Free
Lead Free
PN3569 Product Details
PN3569 Description
The ON Semiconductor PN3569 is an NPN General Purpose Amplifier manufactured by the epitaxial planar process, designed for general purpose amplifier applications where high collector current is required.
PN3569 Features
Designed for use at general purpose amplifiers and switches requiring collector currents to 300mA.
Operating and Storage Junction Temperature Range - 55 ~ 150 ??C