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PN3569

PN3569

PN3569

ON Semiconductor

PN3569 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN3569 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 40V
Current Rating 150mA
Base Part Number PN3569
Polarity NPN
Power Dissipation 625mW
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 500mA
Lead Free Lead Free
PN3569 Product Details

PN3569 Description


The ON Semiconductor PN3569 is an NPN General Purpose Amplifier manufactured by the epitaxial planar process, designed for general purpose amplifier applications where high collector current is required.



PN3569  Features


  • Designed for use at general purpose amplifiers and switches requiring collector currents to 300mA.

  • Operating and Storage Junction Temperature Range - 55 ~ 150 ??C



PN3569  Applications


  • General uses


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