RFD8P05SM

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Manufacturer part number:RFD8P05SM

Manufacturer:ON Semiconductor

Description:RFD8P05SM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:RFD8P05SM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-50V
Max Power Dissipation	38W
Technology	MOSFET (Metal Oxide)
Current Rating	-8A
Element Configuration	Single
Power Dissipation	48W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 20V
Rise Time	30ns
Drain to Source Voltage (Vdss)	50V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-50V
Input Capacitance	350pF
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

RFD8P05SM Description

The RFD8P05SM is a P-Channel power MOSFET made with MegaFET technology. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance.