RFD8P05SM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFD8P05SM Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-50V
Max Power Dissipation
38W
Technology
MOSFET (Metal Oxide)
Current Rating
-8A
Element Configuration
Single
Power Dissipation
48W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
300m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 20V
Rise Time
30ns
Drain to Source Voltage (Vdss)
50V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-50V
Input Capacitance
350pF
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
RFD8P05SM Product Details
RFD8P05SM Description
The RFD8P05SM is a P-Channel power MOSFET made with MegaFET technology. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance.