RFP30N06LE datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP30N06LE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
30A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
96W Tc
Element Configuration
Single
Power Dissipation
96W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
47mOhm @ 30A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Ta
Gate Charge (Qg) (Max) @ Vgs
62nC @ 10V
Rise Time
88ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
+10V, -8V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
10V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Input Capacitance
1.35nF
Drain to Source Resistance
47mOhm
Rds On Max
47 mΩ
Nominal Vgs
2 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
RFP30N06LE Product Details
RFP30N06LE Description
The RFP30N06LE is a MegaFET N-Channel power MOSFET with a channel length of 30nm. This method, which employs feature sizes that are similar to those found in LSI integrated circuits, allows for the most efficient use of silicon, resulting in exceptional performance.
RFP30N06LE Features
30A, 60V
rDS(ON) = 0.047?
2kV ESD Protected
Temperature Compensating PSPICE? Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”