SBC847BPDXV6T1G

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Manufacturer part number:SBC847BPDXV6T1G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V

Case Package:SOT-23

Datasheet:SBC847BPDXV6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	500mW
Terminal Form	FLAT
Frequency	100MHz
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	500mW
Power - Max	357mW
Transistor Application	AMPLIFIER
Halogen Free	Halogen Free
Gain Bandwidth Product	100MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	45V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	45V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	250mV
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	6V
hFE Min	200
Continuous Collector Current	15nA
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free