SBE813-TL-E datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
SBE813-TL-E Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Surface Mount
YES
Number of Pins
8
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Additional Feature
HIGH RELIABILITY, LOW LEAKAGE CURRENT
Subcategory
Other Diodes
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
42μA @ 15V
Voltage - Forward (Vf) (Max) @ If
520mV @ 3A
Forward Current
3A
Max Reverse Leakage Current
42μA
Operating Temperature - Junction
-55°C~125°C
Max Surge Current
20A
Output Current-Max
3A
Application
GENERAL PURPOSE
Max Reverse Voltage (DC)
30V
Average Rectified Current
3A
Number of Phases
1
Reverse Recovery Time
20 ns
Peak Reverse Current
42μA
Max Repetitive Reverse Voltage (Vrrm)
30V
Peak Non-Repetitive Surge Current
20A
Diode Configuration
2 Independent
Max Forward Surge Current (Ifsm)
20A
Reverse Test Voltage
15V
Height
750μm
Length
2.9mm
Width
2.3mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
SBE813-TL-E Product Details
SBE813-TL-E Overview
There is a maximum output voltage of 3A.Array should be a rule to monArrayor the surge current and not allow Array to exceed 20A.The device operates when the forward voltage is set to 3A.The reverse voltage peak of this device is 42μA.The maximum reverse leakage current from a semiconductor device when reverse biased is 42μA.
SBE813-TL-E Features
a maximum output voltage of 3A a peak voltage of 42μA a reverse voltage peak of 42μA
SBE813-TL-E Applications
There are a lot of ON Semiconductor SBE813-TL-E applications of rectifier diode array.