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SMMBT5088LT1G

  • SMMBT5088LT1G
  • SMMBT5088LT1G

SMMBT5088LT1G

SMMBT5088LT1G

ON Semiconductor

SMMBT5088LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBT5088LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MMBT5088
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 300mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 50MHz
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.405000 $0.405
10 $0.382075 $3.82075
100 $0.360449 $36.0449
500 $0.340046 $170.023
1000 $0.320798 $320.798
SMMBT5088LT1G Product Details

SMMBT5088LT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.In the part, the transition frequency is 50MHz.Maximum collector currents can be below 50mA volts.

SMMBT5088LT1G Features


the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz

SMMBT5088LT1G Applications


There are a lot of ON Semiconductor SMMBT5088LT1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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