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SMMUN2211LT3G

  • SMMUN2211LT3G
  • SMMUN2211LT3G

SMMUN2211LT3G

SMMUN2211LT3G

ON Semiconductor

TRANS PREBIAS NPN 246MW SOT23

SOT-23

SMMUN2211LT3G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 246mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MMUN22**L
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.365787 $0.365787
10 $0.345082 $3.45082
100 $0.325549 $32.5549
500 $0.307121 $153.5605
1000 $0.289737 $289.737
SMMUN2211LT3G Product Details
The ON Semiconductor SMMUN2211LT3G is a single, pre-biased bipolar junction transistor (BJT) in a SOT-23 package. It has a maximum collector current of 246 mW and a maximum collector-emitter voltage of 30 V. It is designed for use in low-power, low-voltage applications such as switching, amplifying, and signal processing.

Features of the SMMUN2211LT3G include:
• Low collector-emitter saturation voltage
• Low collector-emitter leakage current
• High gain
• Low noise
• High frequency operation
• High temperature operation

Applications of the SMMUN2211LT3G include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Audio/video

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