DSA3G0100L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 1mA 10V DC current gain.The collector emitter saturation voltage is -100mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In the part, the transition frequency is 300MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.When collector current reaches its maximum, it can reach 30mA volts.
DSA3G0100L Features
the DC current gain for this device is 70 @ 1mA 10V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 100mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
DSA3G0100L Applications
There are a lot of Panasonic Electronic Components DSA3G0100L applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter