DSA3G0100L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSA3G0100L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Max Power Dissipation
100mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100mV
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 1mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
100mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
20V
Max Frequency
300MHz
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
-100mV
Max Breakdown Voltage
20V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
Height
470μm
Length
1.2mm
Width
800μm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSA3G0100L Product Details
DSA3G0100L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 1mA 10V DC current gain.The collector emitter saturation voltage is -100mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In the part, the transition frequency is 300MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.When collector current reaches its maximum, it can reach 30mA volts.
DSA3G0100L Features
the DC current gain for this device is 70 @ 1mA 10V a collector emitter saturation voltage of -100mV the vce saturation(Max) is 100mV @ 1mA, 10mA the emitter base voltage is kept at -5V a transition frequency of 300MHz
DSA3G0100L Applications
There are a lot of Panasonic Electronic Components DSA3G0100L applications of single BJT transistors.