SCR Standard Recovery -40°C~125°C 2.1V-On State (Vtm) (Max) 25mA-Current - Off State (Max) 3-Termination Bulk TO-209AB, TO-93-4, Stud Chassis, Stud Mount
SOT-23
T6071015B4BT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Stud
Mounting Type
Chassis, Stud Mount
Package / Case
TO-209AB, TO-93-4, Stud
Number of Pins
3
Operating Temperature
-40°C~125°C
Packaging
Bulk
Published
2000
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
UPPER
Terminal Form
HIGH CURRENT CABLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
RMS Current (Irms)
235A
Trigger Device Type
SCR
Voltage - Off State
1kV
Voltage - Gate Trigger (Vgt) (Max)
3V
Current - Non Rep. Surge 50, 60Hz (Itsm)
4000A @ 60Hz
Current - Gate Trigger (Igt) (Max)
150mA
Repetitive Peak Off-state Voltage
1000V
Leakage Current (Max)
25mA
Current - On State (It (AV)) (Max)
150A
Non-Repetitive Pk On-state Cur
4000 A
SCR Type
Standard Recovery
Voltage - On State (Vtm) (Max)
2.1V
Current - Off State (Max)
25mA
Repetitive Peak Reverse Voltage
1000V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
30
$111.00733
$3330.2199
T6071015B4BT Product Details
T6071015B4BT Overview
As the RMS current measures the average strength, disregarding the direction, its RMS current (Irms) is 235A.In this device, the repetitive peak off-state voltage is 1000V. This is the maximum voltage allowed across the device.Insulation effectiveness can be evaluated by leakage current, and 25mA is its maximum leakage current.
T6071015B4BT Features
its RMS current (Irms) is 235A the repetitive peak off-state voltage of this device is 1000V its maximal leakage current can be 25mA
T6071015B4BT Applications
There are a lot of Powerex Inc. T6071015B4BT applications of SCRs thyristors.