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2SK1340-E

2SK1340-E

2SK1340-E

Renesas Electronics America

MOSFET N-CH 900V 5A TO-3P

SOT-23

2SK1340-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Rise Time 70ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 900V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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