H7N1002LS-E

new-10%

Manufacturer part number:H7N1002LS-E

Manufacturer:Renesas Electronics America

Description:Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) LDPAK(S)-1

Case Package:SOT-23

Datasheet:H7N1002LS-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-83
Number of Pins	3
Supplier Device Package	4-LDPAK
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	100W Tc
Power Dissipation	100W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 37.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	9700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	75A Ta
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	9.7nF
Rds On Max	10 mΩ
RoHS Status	ROHS3 Compliant