HAT1069C-EL-E

new-10%

Manufacturer part number:HAT1069C-EL-E

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 52m Ω @ 1.5A, 4.5V ±8V 1380pF @ 10V 16nC @ 4.5V 12V 6-SMD, Flat Leads

Case Package:SOT-23

Datasheet:HAT1069C-EL-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
Time@Peak Reflow Temperature-Max (s)	20
Pin Count	6
JESD-30 Code	R-PDSO-F6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	900mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.093Ohm
DS Breakdown Voltage-Min	12V
RoHS Status	RoHS Compliant