HAT2131R-EL-E

new-10%

Manufacturer part number:HAT2131R-EL-E

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 8SO

Case Package:SOT-23

Datasheet:HAT2131R-EL-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 450mA, 10V
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	900mA Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drain to Source Voltage (Vdss)	350V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	900mA
Drain Current-Max (Abs) (ID)	0.9A
Drain-source On Resistance-Max	3.2Ohm
Pulsed Drain Current-Max (IDM)	7.2A
DS Breakdown Voltage-Min	350V
RoHS Status	ROHS3 Compliant