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HAT2170HWS-E

HAT2170HWS-E

HAT2170HWS-E

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.2m Ω @ 22.5A, 10V ±20V 4650pF @ 10V 62nC @ 10V 40V SC-100, SOT-669

SOT-23

HAT2170HWS-E Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
HAT2170HWS-E Product Details

HAT2170HWS-E Overview


A device's maximal input capacitance is 4650pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (7V 10V).

HAT2170HWS-E Features


a 40V drain to source voltage (Vdss)


HAT2170HWS-E Applications


There are a lot of Renesas Electronics America
HAT2170HWS-E applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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