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HAT2279HWS-E

HAT2279HWS-E

HAT2279HWS-E

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12m Ω @ 15A, 10V ±20V 3520pF @ 10V 60nC @ 10V 80V SC-100, SOT-669

SOT-23

HAT2279HWS-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
HAT2279HWS-E Product Details

HAT2279HWS-E Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3520pF @ 10V.The transistor must receive a 80V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

HAT2279HWS-E Features


a 80V drain to source voltage (Vdss)


HAT2279HWS-E Applications


There are a lot of Renesas Electronics America
HAT2279HWS-E applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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