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HS54095TZ-E

HS54095TZ-E

HS54095TZ-E

Renesas Electronics America

MOSFET N-CH 600V 0.2A TO-92

SOT-23

HS54095TZ-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 750mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5 Ω @ 100mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.040031 $4.040031
10 $3.811350 $38.1135
100 $3.595613 $359.5613
500 $3.392087 $1696.0435
1000 $3.200082 $3200.082

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