NP83P04PDG-E1-AY

new-10%

Manufacturer part number:NP83P04PDG-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET P-CH 40V 83A TO-263

Case Package:SOT-23

Datasheet:NP83P04PDG-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2007
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Max Power Dissipation	1.8W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 41.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	9820pF @ 10V
Current - Continuous Drain (Id) @ 25°C	83A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Drain to Source Voltage (Vdss)	40V
Continuous Drain Current (ID)	83A
Drain-source On Resistance-Max	0.008Ohm
Pulsed Drain Current-Max (IDM)	249A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	315 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free